Research of the synthesis of radiant intensity indicatrix of multicomponent beam diode module

Widespread use of semiconductor radiation sources in optoelectronic devices for various purposes requires further study the mechanisms formation photometric characteristics integrated device near illumination zone, where law inverted squares is violated. A mathematical model multicomponent beam-diode module proposed. On its basis analysis influence parameters separate beam on deformation indicatrix radiant intensity at transition from far zone to one carried out. It shown that determining parameter change longitude and polar distance distribution plane modulus product a single diode radius vector. The displacement angle maximum vector more significant wide patterns than concentrated ones. For specific diodes geometry their location suitability proposed priori modeling modules illustrated.